data sheet 1 of 10 rev. 03.1, 2009-02-20 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA190451E ptfa190451f confidential, limited internal distribution description the PTFA190451E and ptfa190451f are thermally-enhanced, 45-watt, internally matched ldmos fets designed for wcdma, td-scdma and other cellular standards in the 1930 to 1990 mhz frequency band. these devices are available in thermally-enhanced packages with eared or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. PTFA190451E package h-36265-2 thermally-enhanced high power rf ldmos fets 45 w, 1930 ? 1990 mhz 2-carrier wcdma drive-up v dd = 28 v, i dq = 450 ma, ? = 1960 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing -55 -50 -45 -40 -35 -30 -25 30 32 34 36 38 40 42 average output power (dbm) im3 (dbc), acpr (dbc) 5 10 15 20 25 30 35 drain efficiency (%) acpr efficiency im3 rf characteristics wcdma measurements (tested in infineon test fixture) v dd = 28 v, i dq = 450 ma, p out = 11 w average ? 1 = 1955 mhz, ? 2 = 1965 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 16.5 17.5 ? db drain efficiency h d 27 28 ? % intermodulation distortion imd ? ?39 ?37 dbc ptfa190451f package h-37265-2 features ? broadband internal matching ? typical two-carrier wcdma performance at 1960 mhz, 28 v - average output power = 11 w - linear gain = 17.5 db - efficiency = 28.0% - intermodulation distortion = ?39 dbc - adjacent channel power = ?42 dbc ? typical cw performance, 1960 mhz, 28 v - output power at p?1db = 60 w - efficiency = 60% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 45 w (cw) output power ? pb-free and rohs compliant *see infineon distributor for future availability.
data sheet 2 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution *see infineon distributor for future availability. rf characteristics (cont.) two-tone measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 450 ma, p out = 45 w pep, ? = 1990 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 17.5 ? db drain efficiency h d ? 38 ? % intermodulation distortion imd ? ?31 ? dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.91 ? w operating gate voltage v ds = 28 v, i dq = 450 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 211 w above 25c derate by 1.21 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 45 w cw) r q jc 0.83 c/w ordering information type and version package outline package description shipping marking PTFA190451E v4 h-36265-2 thermally-enhanced slotted flanges, tray PTFA190451E single-ended ptfa190451f v4 h-37265-2 thermally-enhanced earless flange, tray ptfa190451f single-ended
data sheet 3 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution broadband performance v dd = 28 v, i dq = 450 ma, p out = 12 w 10 15 20 25 30 35 40 1900 1920 1940 1960 1980 2000 2020 frequency (mhz) gain (db), efficiency (%) -35 -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss typical performance (data taken in a production test fixture) power sweep, cw conditions v dd = 28 v, i dq = 450 ma, ? = 1990 mhz 13 14 15 16 17 18 19 0 10 20 30 40 50 60 output power (w) gain (db) 10 20 30 40 50 60 70 drain efficiency (%) efficiency t case = 25c t case = 90c gain two-carrier wcdma at various biases v dd = 28 v, ? = 1960 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, series show i dq -57 -52 -47 -42 -37 -32 30 32 34 36 38 40 42 output power, avg. (dbm) 3rd order imd (dbc) 450 ma 350 ma 400 ma 550 ma 500 ma 2-tone drive-up v dd = 28 v, i dq = 450 ma, ? = 1960 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 34 36 38 40 42 44 46 48 output power, pep (dbm) 5 10 15 20 25 30 35 40 45 drain efficiency (%) im5 efficiency im7 im3 intermodulation distortion (dbc)
data sheet 4 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution typical performance (cont.) *see infineon distributor for future availability. im3, drain efficiency and gain vs. supply voltage i dq = 450 ma, ? = 1960 mhz, p out (pep) = 46.5 dbm, tone spacing = 1 mhz -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 supply voltage (v) 3rd order imd (dbc) 10 15 20 25 30 35 40 45 50 gain efficiency im3 up gain (db), drain efficiency (%) intermodulation distortion products vs. tone spacing v dd = 28 v i dq = 450 ma, ? = 1960 mhz, p out = 46.5 dbm pep -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 30 35 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd 5th 7th single-carrier wcdma drive-up v dd = 28 v, i dq = 450 ma, ? = 1960 mhz, 3gpp wcdma signal, tm1 w/16 dpch, 67% clipping, p/a r = 8.5 db, 3.84 mhz bw -55 -50 -45 -40 -35 -30 -25 30 32 34 36 38 40 42 44 average output power (dbm) 5 10 15 20 25 30 35 drain efficiency (%) acpr low adjacent channel power ratio (dbc) efficiency acpr up 6-carrier td-scdma performance v dc = 28 v, i dq = 380 ma, ? o = 2017.5 mhz 0 5 10 15 20 25 29 31 33 35 37 39 output power, avg. (dbm) drain efficiency (%) -60 -50 -40 -30 -20 -10 acpr (dbc) adj low alt up alt low efficiency adj up
data sheet 5 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 1900 15.51 ?0.094 5.73 ?1.71 1930 16.30 ?0.444 5.68 ?1.52 1960 17.19 ?0.881 5.69 ?1.31 1990 18.02 ?1.437 5.63 ?1.08 2020 18.79 ?2.315 5.61 ?0.91 0 . 1 0 . 3 0 . 5 0 . 2 0 . 4 0 . 1 - w a v e l e n g t h s n g t h s t o w a r d l o a d - 0 . 0 1900 mhz 2020 mhz 1900 mhz z source z load 2020 mhz z 0 = 50 w bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.09 a 0.28 a 0.46 a 0.70 a 1.39 a 2.09 a 2.78 a 3.48 a 4.17 a | typical performance (cont.)
data sheet 6 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 10 v r4 2k v r1 1.2k v c9 10pf l 1 l 10 r9 10 v dut rf_in rf_out l 7 c6 1f c5 0.1f c4 10f 35v c7 0.01f r8 5.1k c8 10pf r7 1k v r6 1k v c10 2.8pf l 8 l 9 l 11 l 13 c11 10pf c13 1f c12 0.02f c14 22f 50v c15 0.7pf c16 10pf l 2 l 3 l 4 l 12 l 5 l 6 v dd a190451ef_sch circuit assembly information dut PTFA190451E or ptfa190451f ldmos transistor pcb 0.76 mm [.030"] thick, e r = 3.48 rogers 4350 1 oz. copper microstrip electrical characteristics at 1960 mhz 1 dimensions: l x w ( mm) dimensions: l x w (in.) l 1 0.031 l , 50.0 w 2.79 x 1.57 0.110 x 0.062 l 2 0.089 l , 50.0 w 8.26 x 1.57 0.325 x 0.062 l 3 0.076 l , 50.0 w 7.04 x 1.57 0.277 x 0.062 l 4 0.045 l , 6.7 w 3.84 x 21.08 0.151 x 0.830 l 5 0.014 l , 6.7 w 1.14 x 21.08 0.045 x 0.830 l 6 0.007 l , 77.0 w 0.64 x 0.76 0.025 x 0.030 l 7 0.123 l , 72.0 w 11.66 x 0.89 0.459 x 0.035 l 8 0.016 l , 8.5 w 1.30 x 16.21 0.051 x 0.638 l 9 0.096 l , 8.5 w 8.13 x 16.21 0.320 x 0.638 l 10 0.171 l , 67.0 w 16.13 x 1.04 0.635 x 0.041 l 11 0.053 l , 41.0 w 4.80 x 2.31 0.189 x 0.091 l 12 0.063 l , 41.0 w 5.72 x 2.31 0.225 x 0.091 l 13 0.030 l , 54.0 w 2.79 x 1.52 0.110 x 0.060 1 electrical characteristics are rounded. reference circuit reference circuit schematic for ? = 1960 mhz
data sheet 7 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6, c13 ceramic capacitor, 1 f digi-key 445-1411-1-nd c7 capacitor, 0.01 f atc 200b 103 c8, c9, c11, c16 ceramic capacitor, 10 pf atc 100b 100 c10 ceramic capacitor, 2.8 pf atc 100b 2r8 c12 capacitor, 0.02 f atc 200b 203 c14 capacitor, 22 f, 50 v digi-key pce3374ct-nd c15 ceramic capacitor, 0.7 pf atc 100b 0r7 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r9 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 1 k-ohms digi-key p1kect-nd r8 chip resistor 5.1 k-ohms digi-key p5.1kect-nd reference circuit (cont.) a190451ef_assy c1 c2 r5 r3 c5 r9 c9 c10 c16 c15 rf_in rf_out a190451_01 ro4350 q1 c7 r8 c8 r6 r7 r4 c3 r2 r1 c4 qq1 c6 c14 c12 c11 c13 v dd *gerber files for this circuit available on request a190451ef_dtl c1 c2 r5 r3 c5 r9 q1 c7 r8 c8 r6 r7 r4 c3 r2 r1 c4 qq1 c6
data sheet 8 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution package outline specifications package h-36265-2 diagram notes:? unless otherwise specified: 1. lead thickness: 0.10 +0.051/ ?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & le ads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower 20.31 [.800] 10.160.25 [.400.010] flange 9.78 [.385] 2x 7.11 [.280] 2x 7.11 [.280] 15.23 [.600] 4x r1.52 [r.060] c l c l (45 x 2.03 [.080]) s d g lid 10.160.25 [.400.010] 0.0381 [.0015] -a- 3.560.38 [.140.015 1.02 [.040] sph 1.57 [.062] 2007-11-16_h-36+37265_pos.vsd_h-36265-2 2x r1.60 [r.063] 15.340.51 [.604.020] 2.590.51 [.102.020]
data sheet 9 of 10 rev. 03.1, 2009-02-20 PTFA190451E ptfa190451f confidential, limited internal distribution package outline specifications (cont.) package h-37265-2 diagram notes:? unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s, d, g - flange & leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower 071119_h-36+37265_pos_h-37265-2 (45 x 2.03 [.080]) 2.590.51 [.102.020] s d g lid 10.160.25 [.400.010] flange 10.16 [.400] 2x 7.11 [.280] lid 10.160.25 [.400.010] 10.16 [.400] 1.02 [.040] 3.56.38 [.140.015] sph 1.57 [.062] 10.16 [.400] 15.34.51 [.604.020] flange 4x r0.63 [r.025] max | 0.025 [.001] | -a- c l c l
data sheet 10 of 10 rev. 03.1, 2009-02-20 PTFA190451E/f v4 confidential, limited internal distribution revision history: 2009-02-20 data sheet previous version: 2006-04-21, ptfa 190451e/f v1, data sheet page subjects (major changes since last revision) 1, 2, 8, 9, 10 new package and new product version. 7 fixed typing error goldmos ? is a registered trademark of infineon technologies ag. edition 2009-02-20 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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